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power management & multimarket data sheet revision 1.3, 2013-09-11 final ESD3V3XU1BL bi-directional ultra low capacitanc e esd / transient protection diode ESD3V3XU1BL tvs diode transient voltage suppressor diodes
edition 2013-09-11 published by infineon technologies ag 81726 munich, germany ? 2013 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
ESD3V3XU1BL final data sheet 3 revision 1.3, 2013-09-11 trademarks of infineon technologies ag aurix?, bluemoon?, c166?, ca npak?, cipos?, cipurse?, comn eon?, econopack?, coolmos?, coolset?, corecontrol?, crossave?, dave?, easypim?, econobri dge?, econodual?, econopim?, eicedriver?, eupec?, fcos?, hitfe t?, hybridpack?, i2rf?, isoface?, isopack?, mipaq?, modstack?, my-d?, novalithic?, omnitune?, optimos?, origa?, primarion?, primepack?, primestack?, pr o-sil?, profet?, rasic?, re versave?, satric?, sieget?, sindrion?, sipmos?, smarti?, smartlew is?, solid flash?, tempfet?, thinq!?, trenchstop?, tricore?, x-go ld?, x-pmu?, xmm?, xposys?. other trademarks advance design system? (ads) of agilent te chnologies, amba?, arm?, multi-ice?, keil?, primecell?, realview?, thumb?, vision? of arm limited, uk. autosar? is licensed by autosar development partnership. bluetooth? of bluetooth sig inc. cat-iq? of dect forum. colossus?, firstgps? of trimble navigation ltd. emv? of emvc o, llc (visa holdings in c.). epcos? of epcos ag. flexgo? of microsoft corp oration. flexray? is licensed by flexray consortium. hyperterminal? of hilgraeve incorporated. iec? of commission electrot echnique internationale. irda? of infrared data association corporation. iso? of international organization for standardization. matlab? of mathworks, inc. maxim? of maxim integrated products, inc. microtec?, nucleus? of mentor graphics corporation. mifare? of nx p. mipi? of mipi alliance, inc. mips? of mips technologies, inc., usa. murata? of murata manufacturing co., microwave offi ce? (mwo) of applied wave research inc., omnivision? of omnivision technologies, inc. open wave? openwave systems inc. red hat? red hat, inc. rfmd? rf micro devices, inc. sirius? of sirius sate llite radio inc. solaris? of sun microsystems, inc. spansion? of spansion llc ltd. symbian? of sy mbian software limited. taiyo yuden? of taiyo yuden co. teaklite? of ceva, inc. t ektronix? of tektroni x inc. toko? of toko kabushiki kaisha ta. unix? of x/open company limited. verilog?, palladium? of cadence design systems, inc. vlynq? of texas instruments inco rporated. vxworks?, wind river? of wind river systems, inc. zetex? of diodes zetex limited. last trademarks update 2010-10-26 revision history: re vision 1.2, 2013-02-06 page or item subjects (major changes since previous revision) revision 1.3, 2013-09-11 5-6 updated of table 2-1 , table 2-2 , table 2-3 and table 2-4
ESD3V3XU1BL bi-directional ultra low capacitance esd / transient protection diode final data sheet 4 revision 1.3, 2013-09-11 1 bi-directional ultra low capaci tance esd / transient protection diode 1.1 features ? esd / transient protection of high speed data lines exceeding ? iec61000-4-2 (esd): 20 kv (air / contact) ? iec61000-4-4 (eft): 2.5 kv / 50 a (5/50 ns) ? iec61000-4-5 (surge): 3 a (8/20 s) ? maximum working voltage: v rwm = 3.6 v ? ultra low capacitance c l =0.20pf (typical) at f =1ghz ? very low clamping voltage: v cl =14v at i tlp = 16 a (typical) according to tlp [1] ? very low dynamic resistance: r dyn =0.45 ? (typical) ? pb-free and halogen-free package (rohs compliant) 1.2 application examples ? usb 3.0, firewire, dvi, hdmi , s-ata, displayport, thunderbolt ? mobile hdmi link, mddi, mipi, swp / nfc 1.3 product description figure 1-1 pin configurati on and schematic diagram table 1-1 ordering information type package configuration marking code ESD3V3XU1BL tslp-2-17 1 line, bi-directional x2 a) pin configuration pg-tslp-2_dual_diode_serie_pinconf_and_schematicdiag.vsd b) schematic diagram pin 1 pin 2 pin 1 pin 2 pin 1 marking (lasered)
ESD3V3XU1BL characteristics final data sheet 5 revision 1.3, 2013-09-11 2 characteristics attention: stresses above the max. values listed here may cause permanent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible dama ge to the component. 2.1 electrical characteristics at t a = 25 c, unless otherwise specified figure 2-1 definitions of electrical characteristics table 2-1 maximum rating at t a = 25 c, unless otherwise specified 1) 1) device is electrically symmetrical parameter symbol values unit min. typ. max. esd (air / contact) discharge 2) 2) v esd according to iec61000-4-2 ( r =330 ? , c = 150 pf discharge network) v esd ??20kv peak pulse current ( t p =8/20 s) 3) 3) i pp according to iec61000-4-5 i pp ??3a peak pulse power t p =8/20 s 3) p pk ??36w operating temperature range t op -40 ? 125 c storage temperature t stg -65 ? 150 c

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ESD3V3XU1BL characteristics final data sheet 6 revision 1.3, 2013-09-11 table 2-2 dc characteristics at t a = 25 c, unless otherwise specified 1) 1) device is electrically symmetrical parameter symbol values unit note / test condition min. typ. max. reverse working voltage v rwm -3.6 ? 3.6 v reverse current i r ? 1 50 na v r =3.3v trigger voltage v t1 5??v holding voltage v h 44.6?v i r =10ma table 2-3 ac characteristics at t a = 25 c, unless otherwise specified parameter symbol values unit note / test condition min. typ. max. line capacitance c l ?0.220.35pf v r =0v, f =1mhz ?0.20? v r =0v, f =1ghz series inductance l s ?0.4?nh table 2-4 esd and surge characteristics at t a = 25 c, unless otherwise specified 1) 1) device is electrically symmetrical parameter symbol values unit note / test condition min. typ. max. clamping voltage 2) 2) ansi/esd stm5.5.1 - elec trostatic discharge sensitive testing using transmission line pulse (tlp) model. tlp conditions: z 0 =50 ? , t p = 100 ns, t r = 0.6 ns and v tlp averaging window: t 1 = 30 ns to t 2 = 60 ns, extraction of dynamic resistance using least squares fit of tlp characteristic between i tlp1 = 5 a and i tlp2 = 40 a. please refer to application note an210 [1] . v cl ?14?v i tlp =16a ?20? i tlp =30a clamping voltage 3) 3) v esd according to iec61000-4-2, v cl at 30 ns ( r =330 ? , c = 150 pf discharge network) ?12? v esd =8kv ?18? v esd =15kv clamping voltage 4) 4) i pp according to iec61000-4-5 ( t p =8/20 s) ?8? i pp =3a dynamic resistance 2) r dyn ?0.45? dynamic resistance 4) ?1?
ESD3V3XU1BL typical characteristics final data sheet 7 revision 1.3, 2013-09-11 3 typical characteristics at t a = 25 c, unless otherwise specified figure 3-1 reverse current i r =f( v r ) figure 3-2 line capacitance c l =f( v r ), f =1mhz 10 -12 10 -11 10 -10 10 -9 10 -8 10 -7 10 -6 -4 -3 -2 -1 0 1 2 3 4 i r [a] v r [v] 0 0.1 0.2 0.3 0.4 0.5 0.6 -4 -3 -2 -1 0 1 2 3 4 c l [pf] v r [v]
ESD3V3XU1BL typical characteristics final data sheet 8 revision 1.3, 2013-09-11 figure 3-3 clamping voltage (tlp): i tlp = f ( v tlp ) according ansi/esd stm5.5.1- electrostatic discharge sensitivity testing using transmission line pulse (tlp) model. tlp conditions: z 0 =50 ? , t p =100ns, t r =0.6ns, i tlp and v tlp averaging window: t 1 =30ns to t 2 = 60 ns, extraction of dynamic resistance using squares fi t to tlp characteristics between i tlp1 = 5 a and i tlp2 = 40 a. please refer to application note an210 [1] -40 -30 -20 -10 0 10 20 30 40 -40 -30 -20 -10 0 10 20 30 40 -20 -15 -10 -5 0 5 10 15 20 i tlp [a] equivalent v iec [kv] v tlp [v] ESD3V3XU1BL r dyn r dyn = 0.45 r dyn = 0.45
ESD3V3XU1BL typical characteristics final data sheet 9 revision 1.3, 2013-09-11 figure 3-4 pulse current (iec61000-4-5) versus clamping voltage: i pp = f ( v cl ) -3 -2 -1 0 1 2 3 -15 -10 -5 0 5 10 15 i pp [a] v cl [v] ESD3V3XU1BL r dyn r dyn = 1.0 r dyn = 1.0
ESD3V3XU1BL typical characteristics final data sheet 10 revision 1.3, 2013-09-11 figure 3-5 clamping voltage at +8 kv discharge according iec61000-4-2 ( r =330 ? , c =150pf) figure 3-6 clamping voltage at -8 kv discharge according iec61000-4-2 ( r =330 ? , c = 150 pf) -50 -25 0 25 50 75 100 125 150 175 200 0 100 200 300 400 v cl [v] t p [ns] scope: 6 ghz, 20 gs/s v cl-max-peak = 134 v v cl-30ns-peak = 12 v -200 -175 -150 -125 -100 -75 -50 -25 0 25 50 0 100 200 300 400 v cl [v] t p [ns] scope: 6 ghz, 20 gs/s v cl-max-peak = -134 v v cl-30ns-peak = -12 v
ESD3V3XU1BL typical characteristics final data sheet 11 revision 1.3, 2013-09-11 figure 3-7 clamping voltage at +15 kv discharge according iec61000-4-2 ( r =330ohm, c = 150 pf) figure 3-8 clamping voltage at -15 kv discharge according iec61000-4-2 ( r =330 ? , c =150pf) -50 -25 0 25 50 75 100 125 150 175 200 0 100 200 300 400 v cl [v] t p [ns] scope: 6 ghz, 20 gs/s v cl-max-peak = 182 v v cl-30ns-peak = 18 v -200 -175 -150 -125 -100 -75 -50 -25 0 25 50 0 100 200 300 400 v cl [v] t p [ns] scope: 6 ghz, 20 gs/s v cl-max-peak = -179 v v cl-30ns-peak = -18 v
ESD3V3XU1BL typical characteristics final data sheet 12 revision 1.3, 2013-09-11 figure 3-9 line capacitance: c l = f (f), v r =0v figure 3-10 insertion loss: s 21 = f (f), v r =0v 0 0.1 0.2 0.3 0.4 0.5 0 1 2 3 4 5 6 7 8 9 10 c l [pf] f [ghz] v r = 0 v -1 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 0 1 2 3 4 5 6 7 8 9 10 s 21 [db] f [ghz] v r = 0 v
ESD3V3XU1BL package information final data sheet 13 revision 1.3, 2013-09-11 4 package information 4.1 tslp-2-17 [2] figure 4-1 tslp-2-17 package outline (dimension in mm) figure 4-2 tslp-2-17 footprint (dimension in mm) figure 4-3 tslp-2-17 packing (dimension in mm) figure 4-4 tslp-2-17 marking (example)

! " ! #$ % tslp-2-7-fp v0 1 0.45 0.275 0.275 0.375 0.925 copper solder mask stencil aperture s 0.35 1 0.6 0.35 0.3

ESD3V3XU1BL references final data sheet 14 revision 1.3, 2013-09-11 references [1] infineon ag - application note an210: effective esd protection design at system level using vf-tlp characterization methodology [2] infineon ag - recommendations for pcb a ssembly of infineon tslp and tsslp package
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